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TSM1N80CW RPG


TSM1N80CW RPG

Part NumberTSM1N80CW RPG

Manufacturer

Description

Datasheet

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TSM1N80CW RPG - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerTaiwan Semiconductor Corporation
Series-
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs21.6Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds200pF @ 25V
FET Feature-
Power Dissipation (Max)2.1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

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